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2SB1103 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1103 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1103 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞ -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA, IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ,IB=-8mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ,IB=-8mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ,IB=-80mA -3.5 V ICBO Collector cut-off current VCB=-60V, IE=0 -100 μA ICEO Collector cut-off current VCE=-50V, RBE=∞ -10 μA hFE DC current gain IC=-4A ; VCE=-3V 1000 VD Diode forward voltage ID=8A 3.0 V Switching times ton Turn-on time 0.5 μs tstg Storage time 3.0 μs tf Fall time IC=-4A ,IB1=-IB2=-8mA 1.0 μs |
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