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Features

■ High ruggedness

■ R

■ Gate Charge (Typ 32nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a

electronic ballast, and also low power switching mode power appliances.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

500

V

I

D

Continuous Drain Current (@T

13.0

A

Continuous Drain Current (@T

7.13

A

I

DM

Drain current pulsed

(note 1)

52

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

240

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

8.6

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

35

W

0.25

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

4.17

R

thcs

Thermal resistance, Case to Sink

0.5

R

thja

Thermal resistance, Junction to ambient

62.5

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 13A

R

1

2

3

SW13N50

SAMWIN

1

2

3

1. Gate 2. Drain 3. Source

TO-220F

Item

Sales Type

Marking

Package

Packaging

1

SW F 13N50

SW13N50

TO-220F

TUBE

Order Codes