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Features

■ High ruggedness MOSFET

■ R

■ Gate Charge (Max 80 nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent

avalanche characteristics. This power MOSFET is usually used at high efficient DC to

DC converter block, high efficiency switch mode power supplies, power factor

correction, electronic lamp ballast based on half bridge.

N-channel Power MOSFET

Absolute maximum ratings

Symbol

Parameter

SW20N60

Unit

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

20

A

Continuous Drain Current (@T

14

A

I

DM

Drain current pulsed

(note 1)

80

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

1100

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

30

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

300

W

2.38

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 175

T

L

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Min.

Typ.

Max.

R

thjc

Thermal resistance, Junction to case

0.42

R

thcs

Thermal resistance, Case to Sink

0.24

R

thja

Thermal resistance, Junction to ambient

40

Mar. 2011. Rev. 2.0

1

2

3

SW20N60

SAMWIN

1. Gate 2. Drain 3. Source

1

2

3

TO-3P

BV

I

D

: 20A*

R

1/7

Item

Sales Type

Marking

Package

Packaging

1

SW W 20N60

SW20N60

TO-3P

TUBE

Order Codes