Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

SW840A Datasheet(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

Part # SW840A
Description  N-channel MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Direct Link  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW840A Datasheet(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW840A Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW840A Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW840A Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW840A Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW840A Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW840A Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW840A Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 3 / 7 page
background image
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
Fig. 4. On state current vs.
diode forward voltage
3/7
10
0
10
1
10
0
10
1
*. Notes :
1. 250us Pulse Test
2. T
C
= 25
O
C
V
DS
, Drain-Source Voltage [V]
Top :
15V
10V
9V
8V
6V
Bottom : 5.5V
2
3
4
5
6
7
8
9
10
10
-1
10
0
10
1
V
GS
, Gate-Source Voltage [V]
150
o
C
25
o
C
-55
o
C
*. Notes :
1. V
DS
= 50V
2. 250us Pulse Test
0
5
10
15
20
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
*. Note : T
J
= 25
O
C
I
D
, Drain Current [A]
V
GS
= 20V
V
GS
= 10V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
V
SD
, Source-Drain Voltage [V]
*. Notes :
1. V
GS
= 0V
2. 250us Pulse Test
150
O
C
25
O
C
0
5
10
15
20
25
30
35
40
45
50
0
500
1000
1500
2000
2500
3000
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
*. Notes :
1. V
GS
= 0V
2. f=1MHz
C
iss
C
oss
C
rss
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 400V
*. Note : I
D
= 8.5 A
Q
G
, Total Gate Charge [nC]
SW840A
SAMWIN



Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com