2SB1255 datasheet(1/3 Pages) ISC

Part #	2SB1255

Description	Silicon PNP Darlington Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

2SB1255

DESCRIPTION

・With TO-3PFa package

・Optimum for 90W Hi-Fi output

・High foward current transfer ratio hFE

・Low collector-emitter saturation voltage

・Complement to type 2SD1895

APPLICATIONS

・Power amplification

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-160

V

VCEO

Collector-emitter voltage

Open base

-140

V

VEBO

Emitter-base voltage

Open collector

-8

V

IC

Collector current

-15

A

ICP

Collector current-peak

-12

A

TC=25℃

100

PC

Collector power dissipation

3

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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2SB1255 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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