2SB1286 datasheet(1/2 Pages) ISC

Part #	2SB1286

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1286

DESCRIPTION

·High DC Current Gain-

:hFE = 1000(Min)@ IC= -1A

·Collector-Emitter Breakdown Voltage-

:V(BR)CEO = -100V(Min)

·Low Collector-Emitter Saturation Voltage

:VCE(sat) = -1.5V(Max)@ IC= -1A

·Complement to Type 2SD1646

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current-Continuous

-2

A

ICM

Collector Current-Peak

-3

A

PC

Collector Power Dissipation

TC=25℃

25

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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