Pre-Production

This is a product in the pre-production phase of development. Device

Ramtron International Corporation

characterization is complete and Ramtron does not expect to change the

1850 Ramtron Drive, Colorado Springs, CO 80921

specifications. Ramtron will issue a Product Change Notice if any

(800) 545-FRAM, (719) 481-7000

specification changes are made.

http://www.ramtron.com

Rev. 2.0

Dec. 2009

Page 1 of 14

FM22LD16

4Mbit F-RAM Memory

Features

4Mbit Ferroelectric Nonvolatile RAM

•

Organized as 256Kx16

•

Configurable as 512Kx8 Using /UB, /LB

•

10

•

NoDelay™ Writes

•

Page Mode Operation to 40MHz

•

Advanced High-Reliability Ferroelectric Process

SRAM Compatible

•

JEDEC 256Kx16 SRAM Pinout

•

55 ns Access Time, 110 ns Cycle Time

Advanced Features

•

Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules

•

No Battery Concerns

•

Monolithic Reliability

•

True Surface Mount Solution, No Rework Steps

•

Superior for Moisture, Shock, and Vibration

Low Power Operation

•

2.7V – 3.6V Power Supply

•

Low Standby Current (90µA typ.)

•

Low Active Current (8 mA typ.)

Industry Standard Configuration

•

Industrial Temperature -40

° C to +85° C

•

48-ball “Green”/RoHS FBGA package

•

Pin compatible with FM21LD16 (2Mb) and

FM23MLD16 (8Mb)

Description

The FM22LD16 is a 256Kx16 nonvolatile memory

that reads and writes like a standard SRAM. A

ferroelectric random access memory or F-RAM is

nonvolatile, which means that data is retained after

power is removed. It provides data retention for over

10 years while eliminating the reliability concerns,

functional

disadvantages,

and

system

design

complexities of battery-backed SRAM (BBSRAM).

Fast write timing and high write endurance make the

F-RAM superior to other types of memory.

In-system operation of the FM22LD16 is very similar

to other RAM devices and can be used as a drop-in

replacement for standard SRAM. Read and write

cycles may be triggered by /CE or simply by

changing the address. The F-RAM memory is

nonvolatile due to its unique ferroelectric memory

process. These features make the FM22LD16 ideal

for

nonvolatile

memory

applications

requiring

frequent or rapid writes in the form of an SRAM.

The FM22LD16 includes a low voltage monitor that

inadvertent access and data corruption under this

condition.

The

device

also

features

software-

controlled write protection. The memory array is

divided into 8 uniform blocks, each of which can be

individually write protected.

The device is available in a 48-ball FBGA package.

Device specifications are guaranteed over industrial

temperature range –40°C to +85°C.

Pin Configuration

/LB

/OE

A0

A1

A2

NC

DQ8

/UB

A3

A4

/CE

DQ0

DQ9

DQ10

A5

A6

DQ1

DQ2

VSS

DQ11

A17

A7

DQ3

VDD

VDD

DQ12

NC

A16

DQ4

VSS

DQ14

DQ13

A14

A15

DQ5

DQ6

DQ15

NC

A12

A13

/WE

DQ7

NC

A8

A9

A10

A11

NC

12

3

4

5

6

A

B

C

D

E

F

G

H

Top View (Ball Down)

Ordering Information

FM22LD16-55-BG

55 ns access, 48-ball

“Green”/RoHS FBGA

FM22LD16-55-BGTR

55 ns access, 48-ball

“Green”/RoHS FBGA,

Tape & Reel