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FM25V02 Datasheet(PDF) 12 Page - Ramtron International Corporation

Part # FM25V02
Description  256Kb Serial 3V F-RAM Memory
PDF  17 Pages
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Manufacturer  RAMTRON [Ramtron International Corporation]
Direct Link  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM25V02 Datasheet(HTML) 12 Page - Ramtron International Corporation

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FM25V02 - 256Kb SPI FRAM
Rev. 2.0
May 2010
Page 12 of 17
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
Ratings
VDD
Power Supply Voltage with respect to VSS
-1.0V to +4.5V
VIN
Voltage on any pin with respect to VSS
-1.0V to +4.5V
and VIN < VDD+1.0V
TSTG
Storage Temperature
-55
°C to + 125°C
TLEAD
Lead Temperature (Soldering, 10 seconds)
260
° C
VESD
Electrostatic Discharge Voltage
- Human Body Model (AEC-Q100-002 Rev. E)
- Charged Device Model (AEC-Q100-011 Rev. B)
- Machine Model (AEC-Q100-003 Rev. E)
1kV
1.25kV
200V
Package Moisture Sensitivity Level
MSL-1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = -40
°C to + 85°C, VDD = 2.0V to 3.6V unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Power Supply Voltage
2.0
3.3
3.6
V
IDD
Power Supply Operating Current
@
C = 1 MHz
@
C = 40 MHz
-
1.5
0.22
2.5
mA
mA
1
ISB
Standby Current
90
150
µA
2
IZZ
Sleep Mode Current
5
8
µA
3
ILI
Input Leakage Current
-
±1
µA
4
ILO
Output Leakage Current
-
±1
µA
4
VIH
Input High Voltage
0.7 VDD
VDD + 0.3
V
VIL
Input Low Voltage
-0.3
0.3 VDD
V
VOH1
Output High Voltage (IOH = -1 mA, VDD=2.7V)
2.4
-
V
VOH2
Output High Voltage (IOH = -100 µA)
VDD-0.2
-
V
VOL1
Output Low Voltage (IOL = 2 mA, VDD=2.7V)
-
0.4
V
VOL2
Output Low Voltage (IOL = 150 µA)
-
0.2
V
RIN
Input Resistance (/HOLD pin)
For VIN = VIH (min)
For VIN = VIL (max)
40
1
K
Ω
M
Ω
5
Notes
1. C toggling between VDD-0.2V and VSS, other inputs VSS or VDD-0.2V.
2. /S=VDD. All inputs VSS or VDD.
3. In Sleep mode and /S=VDD. All inputs VSS or VDD.
4. VSS ≤ VIN ≤ VDD and VSS ≤ VOUT ≤ VDD.
5. The input pull-up circuit is stronger (> 40KΩ) when the input voltage is above VIH and weak (> 1MΩ) when the input
voltage is below VIL.
Data Retention (TA = -40
°C to + 85°C)
Parameter
Min
Max
Units
Notes
Data Retention
10
-
Years



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