2SA1179N / 2SC2812N

No.7198-1/4

Features

•

Miniature package facilitates miniaturization in end products.

•

High breakdown voltage.

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)55

V

Collector-to-Emitter Voltage

VCEO

(--)50

V

Emitter-to-Base Voltage

VEBO

(--)5

V

Collector Current

IC

(--)150

mA

Collector Current (Pulse)

ICP

(--)300

mA

Base Current

IB

(--)30

mA

Collector Dissipation

PC

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)35V, IE=0A

(--)0.1

µA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)0.1

µA

DC Current Gain

hFE

VCE=(--)6V, IC=(--)1mA

200

400

Gain-Bandwidth Product

fT

2SC2812N : VCE=6V, IC=1mA

100

MHz

2SA1179N : VCE=--6V, IC=--10mA

(180)

MHz

Output Capacitance

Cob

VCB=(--)6V, f=1MHz

(4.0)3.0

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(--)50mA, IB=(--)5mA

(--0.15)0.1

(--)0.5

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(--)50mA, IB=(--)5mA

(--)1.0

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(--)10µA, IE=0A

(--)55

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(--)1mA, RBE=∞

(--)50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(--)10µA, IC=0A

(--)5

V

Marking : 2SA1179N : M / 2SC2812N : L

* : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws:

Rank

6

hFE

200 to 400

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN7198A

92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

SANYO Semiconductors

DATA SHEET

2SA1179N / 2SC2812N

PNP / NPN Epitaxial Planar Silicon Transistors

Low-Frequency General-Purpose

Amp Applications