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FM1608B Datasheet(PDF) 1 Page - Ramtron International Corporation

Part # FM1608B
Description  64Kb Bytewide 5V F-RAM Memory
PDF  11 Pages
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Manufacturer  RAMTRON [Ramtron International Corporation]
Direct Link  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM1608B Datasheet(HTML) 1 Page - Ramtron International Corporation

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Preliminary
This is a product that has fixed target specifications but are subject
Ramtron International Corporation
to change pending characterization results.
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 1.2
http://www.ramtron.com
Mar. 2011
Page 1 of 11
FM1608B
64Kb Bytewide 5V F-RAM Memory
Features
64Kbit Ferroelectric Nonvolatile RAM
•
Organized as 8,192 x 8 bits
•
High Endurance 1 Trillion (10
12) Read/Writes
•
38 year Data Retention (@ +75
°C)
•
NoDelay™ Writes
•
Advanced High-Reliability Ferroelectric Process
Superior to BBSRAM Modules
•
No Battery Concerns
•
Monolithic Reliability
•
True Surface Mount Solution, No Rework Steps
•
Superior for Moisture, Shock, and Vibration
•
Resistant to Negative Voltage Undershoots
SRAM & EEPROM Compatible
•
JEDEC 8Kx8 SRAM & EEPROM pinout
•
70 ns Access Time
•
130 ns Cycle Time
Low Power Operation
•
15 mA Active Current
•
25
µA (typ.) Standby Current
Industry Standard Configuration
•
Industrial Temperature -40
°C to +85°C
•
28-pin “Green”/RoHS SOIC Package
Description
The FM1608B is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 38 years while
eliminating
the
reliability
concerns,
functional
disadvantages and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing
and high write endurance make F-RAM superior to
other types of nonvolatile memory.
In-system operation of the FM1608B is very similar
to other RAM devices. Minimum read- and write-
cycle times are equal. The F-RAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM1608B is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM1608B ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the
manufacturability
of
new
designs.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Ordering Information
FM1608B-SG
28-pin “Green”/RoHS SOIC
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
CE
A10
OE
A11
A9
A8
NC
WE
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15


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