2SA1417 / 2SC3647

No.2006-1/5

Features

•

Adoption of FBET, MBIT processes.

•

High breakdown voltage and large current capacity.

•

Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--)120

V

Collector-to-Emitter Voltage

VCEO

(--)100

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)2

A

Collector Current (Pulse)

ICP

(--)3

A

Collector Dissipation

PC

500

mW

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)100V, IE=0A

(--)100

nA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)100

nA

DC Current Gain

hFE

VCE=(--)5V, IC=(--)100mA

100*

400*

Gain-Bandwidth Product

fT

VCE=(--)10V, IC=(--)100mA

120

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(25)16

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(--)1A, IB=(--)100mA

(--0.22)0.13

(--0.6)0.4

V

Base-to-Emitterr Saturation Voltage

VBE(sat)

IC=(--)1A, IB=(--)100mA

(--)0.85

(--)1.2

V

Continued on next page.

* ; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws:

Rank

R

S

T

hFE

100 to 200

140 to 280

200 to 400

Marking 2SA1417: AC

2SC3647: CC

Ordering number : EN2006C

80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS

2SA1417 / 2SC3647

PNP / NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching

Applications

SANYO Semiconductors

DATA SHEET

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN