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2SC5566 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5566 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 5 page ![]() 2SA2013 / 2SC5566 No.6307-2/5 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Output Capacitance Cob VCB=(--)10V, f=1MHz (24)15 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=(--)1A, IB=(--)50mA (--105)85 (--180)130 mV VCE(sat)2 IC=(--)2A, IB=(--)100mA (--200)150 (--340)225 mV Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)100mA (--)0.89 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100µA, RBE=0Ω (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)6 V Turn-On Time ton See specified Test Circuit. (30)35 ns Storage Time tstg See specified Test Circuit. (230)300 ns Fall Time tf See specified Test Circuit. (15)20 ns Package Dimensions Switching Time Test Circuit unit : mm 7007-004 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 Top View Bottom View 1 : Base 2 : Collector 3 : Emitter SANYO : PCP VR10 RB VCC=25V VBE= --5V + + 50 Ω INPUT OUTPUT RL 25 Ω 100 µF 470 µF PW=20 µs IB1 D.C. ≤1% IB2 IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. IC -- VCE IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V 4 3 2 1 0.4 0.8 1.2 1.6 2.0 0 0 IB=0mA 10mA 20mA 30mA 40mA 50mA 60mA IT00153 --4 --3 --2 --1 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 --10mA --20mA --60mA --50mA --80mA --90mA --100mA IB=0mA IT00152 --30mA --40mA --70mA 2SA2013 2SC5566 |
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