BAT42WS-V datasheet(2/4 Pages) VISHAY

2 / 4 page

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Document Number 81813

Rev. 1.1, 05-Aug-10

BAT42WS-V, BAT43WS-V

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Note:

1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Note:

1) Pulse test t

p < 300 µs, tp/T < 0.02

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

RthJA

650 1)

K/W

Junction temperature

125

°C

Ambient operating temperature range

Tamb

- 55 to + 125

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Reverse breakdown voltage

IR = 100 µA (pulsed)

V(BR)

Leakage current 1)

VR = 25 V

0.5

µA

VR = 25 V, Tj = 100 °C

100

µA

Forward voltage 1)

IF = 200 mA

1000

IF = 10 mA

BAT42WS-V

400

IF = 50 mA

BAT42WS-V

650

IF = 2 mA

BAT43WS-V

260

330

IF = 15 mA

BAT43WS-V

450

Diode capacitance

VR = 1 V, f = 1 MHz

7pF

Reverse recovery time

IF = 10 mA, IR = 10 mA,

iR = 1 mA, RL = 100 Ω

trr

5ns

Figure 1. Admissible Power Dissipation vs. Ambient Temperature

20981

amb - Ambient Temperature (°C)

250

200

150

100

150

Figure 2. Typical Forward Characteristics

18443

1200

1000

800

600

400

200

1000

100

0.1

0.01

VF - Instantaneous Forward Voltage (mV)

25 °C

125 °C

- 40 °C

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