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2SC2792 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2792 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2792 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 850 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=50mA 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=0.5A ; VCE=5V 10 Switching times tr Rise time 1.0 μs tstg Storage time 4.0 μs tf Fall time VCC=400V; 2IB1=-IB2=0.1A; RL=800Ω 1.0 μs |
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