BYX82 datasheet(2/5 Pages) VISHAY

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For technical questions within your region, please contact one of the following:

Document Number: 86052

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Rev. 1.6, 09-Aug-10

BYX82, BYX83, BYX84, BYX85, BYX86

Vishay Semiconductors

Standard Avalanche Sinterglass

Diode

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Thermal Resistance vs. Lead Length

Fig. 2 - Junction Temperature vs.

Reverse/Repetitive Peak Reverse Voltage

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX

UNIT

Forward voltage

IF = 1 A

-0.9

Reverse current

VR = VRRM

-0.1

μA

VR = VRRM, Tj = 100 °C

-10

μA

Diode capacitance

VR = 4 V, f = 1 MHz

-20-

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

-2

μs

Reverse recovery charge

IF = IR = 1 A, dI/dt = 5 A/μs

Qrr

-3

μC

120

l – Lead Length ( mm )

94 9572

510

100

TL= constant

400

800

1200

Reverse / Repetitive Peak Reverse Voltage(V)

1600

94 9579

120

160

240

200

BYX

VRRM

RthJA

≤ 35 K/W

RthJA 57 K/W

RthJA 100 K/W

≤

0.6

1.2

1.8

2.4

0.01

0.1

3.0

94 9573

VF – Forward Voltage(V)

Scattering Limits

Tj =25°C

Tj = 175°C

0.1

VR – Reverse Voltage(V)

100

94 9574

f = 1 MHz

Tj =25°C

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