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2SD380 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD380 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD380 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 10 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V VCB= 750V ; IE= 0 100 μA ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 10V 5 15 tf Fall Time 0.9 μs tstg Storage Time IC= 5A, IBend= 1.5A, LB= 5μH 11 μs isc Website:www.iscsemi.cn 2 |
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