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DG528DN Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG528DN Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 12 page ![]() Document Number: 70068 S11-1029–Rev. D, 23-May-11 www.vishay.com 3 Vishay Siliconix DG528, DG529 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V, WR = 0, RS = 2.4 V, VIN = 2.4 V, 0.8 µF f Temp.b Typ.c A Suffix - 55 °C to 125 °C B, C, D Suffix - 40 °C to 85 °C Unit Min.d Max.d Min.d Max.d Analog Switch Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V Drain-Source On-Resistance RDS(on) VD = ± 10 V, IS = - 200 µA Room Full 270 400 500 450 550 Greatest Change in RDS(on) Between Channelsf R DS(on) - 10 V < VS < 10 V Room 6 % Source Off Leakage Current IS(off) VEN = 0 V, VD = ± 10 V VS = ± 10 V Room Full ± 005 - 1 - 50 1 50 - 5 - 50 5 50 nA Drain Off Leakage Current ID(off) VEN = 0 V, VD = ± 10 V VS = ± 10 V DG528 Room Full ± 0.015 - 10 - 200 10 200 - 20 - 200 20 200 DG529 Room Full ± 0.008 - 10 - 100 10 100 - 20 - 100 20 100 Drain On Leakage Current ID(on) VS = VD = ± 10 V VEN = 2.4 V DG528 Room Full ± 0.03 - 10 - 200 10 200 - 20 - 200 20 200 DG529 Room Full ± 0.015 - 10 - 100 10 100 - 20 - 100 20 100 Digital Control Logic Input Current IAH VA = 2.4 V Room Hot - 0.002 - 10 - 30 - 10 - 30 µA Input Voltage High VA = 15 V Room Hot 0.006 10 30 10 30 Logic Input Current Input Voltage Low IAL VEN = 0 V, 2.4 V, VA = 0 V RS = 0 V, WR = 0 V Room Hot - 0.002 - 10 - 30 - 10 - 30 Dynamic Characteristics Transition Time tTRANS See Figure 5 Room 0.6 1 µs Break-Before-Make Interval tOPEN See Figure 4 Room 0.2 EN and WR Turn-On Time tON(EN,WR) See Figure 6 and 7 Room 1 1.5 EN and WR Turn-Off Time tOFF(EN,RS) See Figure 6 and 8 Room 0.4 1 Charge Injection Q VS = 0 V, Ry = 0 CL = 10 F Room 4 pC Off Isolation OIRR VEN = 0 V, RL = 1 kCL = 15 pF VS = 7 VRMS, f = 500 kHz Room 68 dB Logic Imput Capacitance Cin f = 1 MHz Room 2.5 pF Source Off Capacitance CS(off) VEN = 0 V, VD = 0 V, f = 140 kHz Room 5 Drain Off Capacitance CD(off) VEN = 0 V, VD = 0 V f = 140 kHz DG528 Room 25 DG529 Room 12 Minimum Input Timing Requirements Write Pulse Width tW Full 300 300 ns AX, EN Data Set Up time tS Full 180 180 AX, EN Data Hold Time tH Full 30 30 Reset Pulse Width tRS VS = 5 V, See Figure 3 Full 500 500 Power Supplies Positive Supply Current I+ VEN = VA = 0 V Room 2.5 2.5 mA Negative Supply Current I- Room - 1.5 - 1.5 |
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