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2SD1193 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1193 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1193 DESCRIPTION ・With TO-3PN package ・Complement to type 2SB883 ・High DC current gain ・High current capacity and wide ASO ・Low saturation voltage APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 15 A ICP Collector current (Pulse) 20 A PC Collector power dissipation TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
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