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2SD1194 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1194 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1194 DESCRIPTION ・ With TO-220 package ・ Complement to type 2SB884 ・ High DC current gain. ・ High current capacity and wide ASO. ・ Low saturation voltage ・ DARLINGTON APPLICATIONS ・ Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 5 A Ta=25℃ 1.75 PC Collector power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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