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2SD1390 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1390 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1390 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V VCB= 750V; IE= 0 50 μA ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1 mA hFE DC Current Gain IC= 2A; VCE= 5V 2 7 tf Fall Time 1 μs tstg Storage Time IC= 2.5A, IBend= 1.1A, LB= 10μH B 11 μs isc Website:www.iscsemi.cn 2 |
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