2SD1692 datasheet(2/2 Pages) ISC

Part #	2SD1692

Description	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1692

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 3A; IB= 3mA, L= 1.0mH

100

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1.5A; IB= 1.5mA

1.2

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1.5A; IB= 1.5mA

2.0

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

μA

ICEO

Collector Cutoff Current

VCE= 100V; RBE= ∞

1.0

hFE-1

DC Current Gain

IC= 1.5 A; VCE= 2V

2000

20000

hFE-2

DC Current Gain

IC= 3 A; VCE= 2V

1000

Switching Times

ton

Turn-on Time

0.5

μs

tstg

Storage Time

2.0

μs

Fall Time

IC= 1.5A, IB1= -IB2= 1.5mA;

RL= 27Ω; VCC≈ 40V

1.0

μs

hFE-1 Classifications

2000-5000

4000-12000

8000-20000

isc Website：www.iscsemi.cn

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