2SD1773 datasheet(2/3 Pages) ISC

Part #	2SD1773

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1773

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=2A , L=10mH

120

V(BR)EBO

Emitter-base breakdown voltage

IE=50mA ;IC=0

VCEsat-1

Collector-emitter saturation voltage

IC=4A ;IB=8mA

1.5

VCEsat-2

Collector-emitter saturation voltage

IC=8A ;IB=80mA

3.0

VBEsat-1

Base-emitter saturation voltage

IC=4A ;IB=8mA

2.0

VBEsat-2

Base-emitter saturation voltage

IC=8A ;IB=80mA

3.5

ICBO

Collector cut-off current

VCB=120V ;IE=0

100

μA

ICEO

Collector cut-off current

VCE=100V ;IB=0

μA

hFE

DC current gain

IC=4A ; VCE=3V

1000

20000

Transition frequency

IC=0.5A ; VCE=10V,f=1MHz

MHz

Switching times

ton

Turn-on time

0.7

μs

Storage time

6.0

μs

Fall time

IC=4A ;IB1=8mA

IB2=-8mA; VCC=50V

2.0

μs

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