Document Number: 88585

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Revision: 15-Mar-11

3

This datasheet is subject to change without notice.

EGP50A thru EGP50G

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1

1

10

100

Instantaneous Forward Voltage (V)

T

T

EGP20A thru EGP20D

EGP20F and EGP20G

Pulse Width = 300 μs

1 % Duty Cycle

0

20

40

60

80

100

0.001

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

0.1

1

10

100

1000

0

30

60

90

120

150

180

210

Reverse Voltage (V)

T

f = 1.0 MHz

V

EGP20A thru EGP20D

EGP20F and EGP20G

0.01

0.1

1

10

100

0.1

1

10

100

t - Pulse Duration (s)

GP20

1.0 (25.4)

MIN.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

0.210 (5.3)

0.190 (4.8)

DIA.

0.042 (1.07)

0.037 (0.94)

DIA.