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2SD2107 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2107 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2107 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 70 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.2 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 60V; RBE= ∞ 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 60 200 hFE-2 DC Current Gain IC= 0.1A ; VCE= 4V 35 hFE-1 classifications B C 60-120 100-200 isc Website:www.iscsemi.cn 2 |
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