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BD190 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD190 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD190 DESCRIPTION ・ ・With TO-126 package ・High current ・Complement to type BD189 APPLICATIONS ・For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter -base voltage Open collector -5 V IC Collector current (DC) -4 A IB Base current -2 A Pt Total power dissipation Tmb≤70℃ 40 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance, junction to case 3.12 ℃/W |
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