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BD249 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD249
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD249 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BD249 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD249 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD249 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD249/A/B/C
DESCRIPTION
・With TO-3PN package
・Complement to type BD250/A/B/C
・125 W at 25°C case temperature
・25 A continuous collector current
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BD249
45
BD249A
60
BD249B
80
VCEO
Collector-emitter voltage
BD249C
Open base
100
V
BD249
55
BD249A
70
BD249B
90
VCBO
Collector-base voltage
BD249C
Open base
115
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
25
A
ICM
Collector current-peak
40
A
IB
Base current
5
A
PC
Collector power dissipation
TC=25℃
125
W
Tj
Junction temperature
-65~150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.0
℃/W
Fig.1 simplified outline (TO-3PN) and symbol


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