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BD318 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD318
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD318 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD318
DESCRIPTION
・With TO-3 package
・High DC current gain
・Excellent safe operating area
・Complement to type BD317
APPLICATIONS
・Designed for high power amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-16
A
ICM
Collector current(peak)
-20
A
IB
Base current
-5
A
PT
Total power dissipation
TC=25℃
200
W
Tj
Junction temperature
-65~200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
0.875
℃/W
Fig.1 simplified outline (TO-3) and symbol


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