BD708 datasheet(2/3 Pages) ISC

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD708 BD710 BD712

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD708

-60

BD710

-80

VCEO(SUS)

Collector-emitter

sustaining voltage

BD712

IC=-0.1A, IB=0

-100

VCEsat

Collector-emitter saturation voltage

IC=-4A ,IB=-0.4A

-1.0

VBE

Base-emitter voltage

IC=-4A , VCE=-4V

-1.5

BD708

VCB=-60V, IE=0

TC=150℃

-0.1

-1.0

BD710

VCB=-80V, IE=0

TC=150℃

-0.1

-1.0

ICBO

Collector cut-off current

BD712

VCB=-100V, IE=0

TC=150℃

-0.1

-1.0

BD708

VCE=-30V, IB=0

BD710

VCE=-40V, IB=0

ICEO

Collector cut-off current

BD712

VCE=-50V, IB=0

-0.1

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1.0

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

120

400

hFE-2

DC current gain only for BD708

IC=-2A ; VCE=-2V

hFE-3

DC current gain

IC=-4A ; VCE=-4V

150

BD708

BD710

hFE-4

DC current gain

BD712

IC=-10A ; VCE=-4V

Transition frequency

IC=-0.3A;VCE=-3V;

MHz

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