BD809 datasheet(1/3 Pages) ISC

Part #	BD809

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD809

DESCRIPTION

・

・With TO-220C package

・Complement to type BD810

・DC current gain

: hFE = 30 (Min) @ IC = 2.0 Adc

APPLICATIONS

・Designed for use in high power audio

amplifiers utilizing complementary or

quasi complementary circuits.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

80

V

VCEO

Collector-emitter voltage

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

10

A

IB

Base current

6

A

PD

Total power dissipation

TC=25℃

90

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

1.39

℃/W

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BD809 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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