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BD895A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BD895A
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD895A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD895A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD895A Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD895A Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BD895A/897A/899A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD895A
45
BD897A
60
V(BR)CEO
Collector-emitter
breakdown voltage
BD899A
IC=100mA, IB=0
80
V
VCEsat
Collector-emitter saturation voltage
IC=4A ,IB=16mA
2.8
V
VBE
Base-emitter on voltage
IC=4A ; VCE=3V
2.5
V
BD895A
VCB=45V, IE=0
TC=100℃
0.2
2.0
BD897A
VCB=60V, IE=0
TC=100℃
0.2
2.0
ICBO
Collector
cut-off current
BD899A
VCB=80V, IE=0
TC=100℃
0.2
2.0
mA
BD895A
VCE=30V, IB=0
BD897A
VCE=30V, IB=0
ICEO
Collector
cut-off current
BD899A
VCE=40V, IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2
mA
hFE
DC current gain
IC=4A ; VCE=3V
750
VEC
Diode forward voltage
IE=8A
3.5
V
ton
Turn-on time
1
μs
toff
Turn-off time
IC=3A ; IB1=-IB2=12mA
VBE=-3.5V;RL=10Ω;tp=20μs
5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.79
℃/W



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