BDV64 datasheet(2/2 Pages) ISC

Part #	BDV64

Description	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDV64/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDV64

-60

BDV64A

-80

BDV64B

-100

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDV64C

IC= -30mA; IB= 0

-120

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -20mA

-2.0

VBE(on)

Base-Emitter On Voltage

IC= -5A; VCE= -4V

-2.5

ICEO

Collector Cutoff Current

VCE=

2VCEOmax; IB= 0

-2.0

BDV64

VCB= -40V; IE= 0;TJ= 150℃

BDV64A

VCB= -50V; IE= 0;TJ= 150℃

BDV64B

VCB= -60V; IE= 0;TJ= 150℃

ICBO

Collector Cutoff Current

BDV64C

VCB= -70V; IE= 0;TJ= 150℃

-2.0

ICBO

Collector Cutoff Current

VCB= VCBOmax; IE= 0

-0.4

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5

hFE

DC Current Gain

IC= -5A; VCE= -4V

1000

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