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BDV65 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BDV65
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDV65 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDV65 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDV65 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BDV65 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BDV65/65A/65B/65C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDV65
60
BDV65A
80
BDV65B
100
V(BR)CEO
Collector-emitter
breakdown voltage
BDV65C
IC=30mA, IB=0
120
V
VCEsat
Collector-emitter saturation voltage
IC=5A ,IB=20mA
2.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=4V
2.5
V
BDV65
VCB=60V, IE=0
VCB=30V, IE=0;TC=150℃
0.4
2.0
BDV65A
VCB=80V, IE=0
VCB=40V, IE=0;TC=150℃
0.4
2.0
BDV65B
VCB=100V, IE=0
VCB=50V, IE=0;TC=150℃
0.4
2.0
ICBO
Collector
cut-off current
BDV65C
VCB=120V, IE=0
VCB=60V, IE=0;TC=150℃
0.4
2.0
mA
BDV65
VCE=30V, IB=0
BDV65A
VCE=40V, IB=0
BDV65B
VCE=50V, IB=0
ICEO
Collector
cut-off current
BDV65C
VCE=60V, IB=0
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
mA
hFE
DC current gain
IC=5A ; VCE=4V
1000
VEC
Diode forward voltage
IE=10A
3.5
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.0
℃/W



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