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BDW43 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDW43
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW43 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BDW43 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDW43 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW43
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 5A
·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A
= 3.0V(Max.)@ IC= 10A
·Complement to Type BDW48
APPLICATIONS
·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
B
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
85
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.47
℃/W
isc Website：www.iscsemi.cn


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