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BDW47 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW47 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW47 DESCRIPTION ・With TO-220C package ・Complement to type BDW42 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For general purpose and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -15 A IB Base current -0.5 A PD Total power dissipation TC=25℃ 85 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.47 ℃/W |
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