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BDW51B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDW51B
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW51B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BDW51B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDW51B Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION
·Collector Current -IC= 15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A
80V(Min)- BDW51B; 100V(Min)- BDW51C
·Complement to Type BDW52/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW51
45
BDW51A
60
BDW51B
80
VCBO
Collector-Base
Voltage
BDW51C
100
V
BDW51
45
BDW51A
60
BDW51B
80
VCEO
Collector-Emitter
Voltage
BDW51C
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current
7
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.4
℃/W
isc Website：www.iscsemi.cn


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