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BDW84C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW84C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW84/84A/84B/84C/84D DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDW84 -45 BDW84A -60 BDW84B -80 BDW84C -100 VCBO Collector-base voltage BDW84D Open emitter -120 V BDW84 -45 BDW84A -60 BDW84B -80 BDW84C -100 VCEO Collector-emitter voltage BDW84D Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -0.5 A TC=25℃ 150 PC Collector power dissipation Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
Similar Part No. - BDW84C |
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Similar Description - BDW84C |
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