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BDX77 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDX77 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BDX77 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 5 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 1.5 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V ICEO Collector cut-off current VCE=30V ;IB=0; 0.2 mA ICBO Collector cut-off current VCB=40V ;IE=0;Tj=150℃ 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE DC current gain IC=1A ; VCE=2V 30 fT Transition frequency IC=0.3A ; VCE=3V 7.0 MHz VBE Base-emitter on voltage IC=3A;VCE=2V 1.5 V Switching times ton Turn-on time 1.0 μs toff Turn-off time IC=2A IB1=-IB2=0.2A; 4.0 μs |
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