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BDX86A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BDX86A
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX86A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDX86A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDX86A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX86/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDX86
-45
BDX86A
-60
BDX86B
-80
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX86C
IC= -100mA; IB= 0
-100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -4A; IB= -16mA
B
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -8A; IB= -40mA
B
-4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -8A; IB= -80mA
B
-4.0
V
VBE(on)
Base-Emitter On Voltage
IC= -4A; VCE= -3V
-2.8
V
BDX86
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150℃
-0.5
-5.0
BDX86A
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TC= 150℃
-0.5
-5.0
BDX86B
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150℃
-0.5
-5.0
ICBO
Collector
Cutoff Current
BDX86C
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150℃
-0.5
-5.0
mA
BDX86
VCE= -22V; IB= 0
B
BDX86A
VCE= -30V; IB= 0
B
BDX86B
VCE= -40V; IB= 0
B
ICEO
Collector
Cutoff Current
BDX86C
VCE= -50V; IB= 0
B
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -4A; VCE= -3V
750
18000
hFE-3
DC Current Gain
IC= -8A; VCE= -4V
200
isc Website：www.iscsemi.cn
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