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BU931P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU931P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931P DESCRIPTION · ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current -peak 30 A IB Base current 1 A IBM Base current -peak 5 A PT Total power dissipation TC=25℃ 135 W Tj Max.operating junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.1 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
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