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BU931T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU931T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931T DESCRIPTION · ·With TO-220C package ·Fast switching speed ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions.. ·High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 10 A ICM Collector current (peak) 15 A IB Base current 1 A IBM Base current 5 A Ptot Total power dissipation TC=25℃ 125 W Tj Max.operating junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.2 ℃/W |
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