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BA592 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BA592 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 2 page  Semiconductor Group 2 BA 592 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. typ. Unit Values max. Forward voltage IF = 100 mA VF V ––1 Reverse current VR = 20 V IR nA ––20 Diode capacitance f = 1 MHz VR = 1 V VR = 3 V CT pF – 0.6 0.92 0.85 1.4 1.1 Forward resistance f = 100 MHz IF = 3 mA IF = 10 mA rf Ω – – 0.45 0.36 0.7 0.5 Reverse resistance VR = 1 V, f = 100 MHz 1/gp K Ω – 100 – Series inductance LS nH –2– Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz |
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