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BA885 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BA885 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 2 page  Semiconductor Group 2 BA 885 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. typ. Unit Values max. Forward voltage IF = 50 mA VF V – – 1.1 Reverse current VR = 30 V IR nA ––50 Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz CT pF – – 0.28 0.23 0.6 0.4 Forward resistance f = 100 MHz IF = 1.5 mA IF = 10 mA rf Ω – – 22 5 40 7 Zero bias conductance VR = 0 V, f = 100 MHz gp µS –70 – Series inductance LS nH –2– Diode capacitance CT = f (VR) f = 1 MHz / 100 MHz Forward resistance rf = f (IF) f = 100 MHz |
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