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GSOT03 Datasheet(PDF) 5 Page - Vishay Siliconix

Part # GSOT03
Description  Single-Line ESD-Protection in SOT-23
PDF  8 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

GSOT03 Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 85807
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 2.0, 22-Jul-10
5
GSOT03 to GSOT36
Single-Line ESD-Protection in
SOT-23
Vishay Semiconductors
Note
• BiAs mode (between pin 3 and pin 1)
Note
• BiAs mode (between pin 3 and pin 1)
Note
• BiAs mode (between pin 3 and pin 1)
ELECTRICAL CHARACTERISTICS GSOT04
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 20 μA
VRWM
4-
-
V
Reverse current
at VR = 4 V
IR
-
-
20
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
56.1
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-7.5
9
V
at IPP = IPPM = 30 A
-
11.2
14.3
V
Forward clamping voltage
at IPP = 1 A
VF
-1
1.2
V
at IPP = IPPM = 30 A
-
4.5
-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
310
450
pF
at VR = 2 V; f = 1 MHz
-
200
-
pF
ELECTRICAL CHARACTERISTICS GSOT05
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 10 μA
VRWM
5-
-
V
Reverse current
at VR = 5 V
IR
-
-
10
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
66.8
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-7
8.7
V
at IPP = IPPM = 30 A
-
12
16
V
Forward clamping voltage
at IPP = 1 A
VF
-1
1.2
V
at IPP = IPPM = 30 A
-
4.5
-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
260
350
pF
at VR = 2.5 V; f = 1 MHz
-
150
-
pF
ELECTRICAL CHARACTERISTICS GSOT08
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
--
1
lines
Reverse working voltage
at IR = 5 μA
VRWM
8-
-
V
Reverse current
at VR = 8 V
IR
--
5
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
910
-
V
Reverse clamping voltage
at IPP = 1 A
VC
-
10.7
13
V
at IPP = IPPM = 18 A
-
15.2
19.2
V
Forward clamping voltage
at IPP = 1 A
VF
-1
1.2
V
at IPP = IPPM = 18 A
-
3
-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
160
250
pF
at VR = 4 V; f = 1 MHz
-
80
-
pF



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