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BUL312FP Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUL312FP
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL312FP Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL312FP
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1150
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak
tp<5ms
10
A
IB
B
Base Current-Continuous
3
A
IBM
Base Current-peak tp<5ms
4
A
PC
Collector Power Dissipation
TC=25℃
36
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃/W
Rth j-A
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc Website：www.iscsemi.cn


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