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BUL381 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUL381
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL381 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL381 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL381 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUL381 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUL381
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; L=25mH
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.2A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
0.7
V
VCEsat-3
Collector-emitter saturation voltage
IC=3A ;IB=0.8A
1.1
V
VBEsat-1
Base-emitter saturation voltage
IC=1A ;IB=0.2A
1.1
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
ICES
Collector cut-off current
VCE=800V VBE=0
Tj=125℃
100
500
μA
ICEO
Collector cut-off current
VCE=400V; IB=0
250
μA
hFE-1
DC current gain
IC=2A ; VCE=5V
8
hFE-2
DC current gain
IC=10mA ; VCE=5V
10
Switching times resistive load
ton
Turn-on time
1
μs
ts
Storage time
1.4
2.2
μs
tf
Fall time
VCC=250V ,IC=2A
IB1=- IB2=0.4A
tp=30μs
0.8
μs



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