BUL382 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUL382

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; L= 25mH

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

0.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

0.7

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.8A

1.1

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.1

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.2

ICES

Collector Cutoff Current

VCE= 800V; VBE= 0

VCE= 800V; VBE= 0, TC= 125℃

0.1

0.5

ICEO

Collector Cutoff Current

VCE= 400V; IB= 0

0.25

hFE-1

DC Current Gain

IC= 2A; VCE= 5V

hFE-2

DC Current Gain

IC= 10mA; VCE= 5V

Switching Times, Resistive Load

ton

Turn-On Time

1.0

μs

Storage Time

2.5

μs

Fall Time

IC= 2A; IB1= -IB2= 0.4A;

VCC= 250V; tp= 30μs

0.8

μs

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