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BUL416 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUL416
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL416 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUL416 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL416 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL416
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 800V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max) @ IC= 2A
·Very High Switching Speed
APPLICATIONS
·Designed for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1600
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-peak
tp<5ms
9
A
IB
B
Base Current-Continuous
5
A
IBM
Base Current-peak tp<5ms
8
A
PC
Collector Power Dissipation
TC=25℃
110
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.14
℃/W
Rth j-A
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc Website：www.iscsemi.cn


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