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BUL510 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUL510 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL510 DESCRIPTION ・ ・With TO-220C package ・High voltage,high speed APPLICATIONS ・Electronic ballasts for fluorescent lighting ・Switch mode power supplies ・Electronic transformer for halogen lamp PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 10 A ICM Collector current-Peak tp<5ms 18 A IB Base current (DC) 3.5 A IBM Base current-Peak tp<5ms 7 A Ptot Total power dissipation TC=25℃ 100 W Tj Maximum operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-case Thermal resistance junction to case 1.25 ℃/W |
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