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BUL1203E Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUL1203E
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL1203E Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL1203E Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL1203E Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL1203E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0, L= 25mH
550
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
0.7
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
1.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 3A; IB= 1A
B
1.5
V
ICES
Collector Cutoff Current
VCE= 1200V; VBE= 0
0.1
mA
ICEO
Collector Cutoff Current
VCE= 550V; IB= 0
0.1
mA
hFE-1
DC Current Gain
IC= 1mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-3
DC Current Gain
IC= 0.8A; VCE= 3V
14
32
hFE-4
DC Current Gain
IC= 2A; VCE= 5V
9
28
Switching Times ;Resistive Load
ton
Turn-on Time
0.5
μs
ts
Storage Time
3.0
μs
tf
Fall Time
IC= 2A; IB1= 0.4A; IB2= -0.8A;
tp= 30μs; VCC= 150V
0.3
μs
isc Website：www.iscsemi.cn



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