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BUP23B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUP23B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUP23B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUP23B 400 VCEO(SUS) Collector-Emitter Sustaining Voltage BUP23C IC= 100mA ; IB= 0;L= 25mH 450 V BUP23B IC= 10A; IB= 1.33A 1.5 VCE(sat) Collector-Emitter Saturation Voltage BUP23C IC= 10A; IB= 1.67A 1.5 V BUP23B IC= 10A; IB= 1.33A 1.5 VBE(sat) Base-Emitter Saturation Voltage BUP23C IC= 10A; IB= 1.67A 1.5 V ICES Collector Cutoff Current VCE= VCESmax ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 9V ; IC= 0 10 mA hFE DC Current Gain IC= 1A ; VCE= 5V 25 Switching Times, Resistive Load ton Turn-On Time 0.7 μs tstg Storage Time 2.0 μs tf Fall Time For BUP23B IC= 10A ;IB1= -IB2= 1.33A For BUP23C IC= 10A ;IB1= -IB2= 1.67A 0.27 μs isc Website:www.iscsemi.cn 2 |
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